2.4 V 5.5 V FIR 4 M ビット/秒) - ?· For technical questions within your region, please contact…

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  • 2.4 V 5.5 VFIR4 M /

    TFDU6103Vishay Semiconductors

    Not for New Designs

    Document Number: 82342 For technical questions within your region, please contact one of the following:irdasupportAM@vishay.com, irdasupportAP@vishay.com, irdasupportEU@vishay.com

    www.vishay.comRev. 1.5, 06-Sep-13 1

    TFDU6103 IrDA 4 M / FIR IrDA2 MH PINIRED CMOS ICVishay FIR BabyFace TFDU6103 /I/O PC87338PC87108P87109SMC FDC37C669FDC37N769CAM35C44 SH3TFDU6300

    PC PC PCWin CE

    Palm PCPDA TV

    2.4 V 5.5V< 3.3 mA < 1 A 9.7 mm x 4.7 mm x 4 mm - 25C 85C 886 nmIrDA IrDA > 1 m 15 IrDA > 8 m 22 m ESD > 1 kV > 100 mA GSM 700 MHz 2000

    MHz >550 V/m LED No. 6,157,476 1IEC 60825-12001 LEDLED /MSL4 RoHS 2002/95/ECWEEE 2002/96/EC

    20110

    (k / )

    H x L x W

    (mm x mm x mm)

    (m)

    (V)

    (mA)

    TFDU6103 4000 4 x 9.7 x 4.7 0 1 2.4 5.5 2

    /TFDU6103-TR3 1000 pcsTFDU6103-TT3 1000 pcs

  • www.vishay.com For technical questions within your region, please contact one of the following:irdasupportAM@vishay.com, irdasupportAP@vishay.com, irdasupportEU@vishay.com

    Document Number: 823422 Rev. 1.5, 06-Sep-13

    TFDU6103Vishay Semiconductors 2.4 V 5.5 V

    FIR4 M /

    Not for New Designs

    TFDU6103 0.2 g

    :VishayIrDASIR: 2.4 k/ 115.2 k/IrPhy 1.0MIR: 576 k / 1152 k /FIR: 4 M /VFIR: 16 M /MIR FIRIrPhy 1.1 IrPhy 1.2SIRIrPhy 1.3MIR FIRIrPhy 1.4 VFIRLED IR IRED

    Contro lle d Dr iv er

    Tr i- Stat e Dr iv er

    GND

    TXD

    RXD

    VCC2

    VCC1

    Am pl if ie r Co mp ar ator

    SD

    Lo gi c andContro l

    IR ED C

    18468

    U Option Baby Face (universal)

    IRED Detector

    1 3 5 72 4 6 817087

    SYMBOL I/O

    1 VCC2IRED anode

    IRED anode VCC2 3.6 V

    2 IRED cathode IRED cathode

    3 TXDSD LowTXD 100 s LEDSD

    I High

    4 RXD CMOS TTL CMOS

    500 k

    O Low

    5 SD

    TXDTXD = low: SIRTXD = high: MIR FIR

    I High

    6 VCC1 7 NC8 GND

  • Document Number: 82342 For technical questions within your region, please contact one of the following:irdasupportAM@vishay.com, irdasupportAP@vishay.com, irdasupportEU@vishay.com

    www.vishay.comRev. 1.5, 06-Sep-13 3

    TFDU61032.4 V 5.5 V

    FIR4 M /Vishay Semiconductors

    Not for New Designs

    8

    Vishay

    SYMBOL MIN. TYPICAL MAX. 0 V < VCC2 < 6 V VCC1 - 0.5 + 6 V

    0 V < VCC1 < 6 V VCC2 - 0.5 + 6.5 V

    IRED anode 10 mA

    25 mA

    6 PD 500 mW

    TJ 125 Tamb - 25 + 85 Tstg - 25 + 85

    4260

    IIRED (DC) 125 mA

    < 90 ston < 20 % IIRED (RP) 600 mA

    IRED anode VIREDA - 0.5 + 6.5 V

    VIN > VCC1 VIN 5.5 V

    IEC/EN 60825-1 (2007-03)DIN EN 60825-1 (2008-05) SAFETY OF LASER PRODUCTS - Part 1: equipment classification and requirements 1

    IEC 62471 (2006)CIE S009 (2002) DIRECTIVE 2006/25/EC OF THE EUROPEAN PARLIAMENT AND OF THE COUNCIL of 5thApril 2006 89/391/EEC 16(1) 19

    (1) SYMBOL MIN. TYPICAL MAX. VCC 2.4 5.5 V

    IRED 85 mA

    RXD RXDSIR ICC 1.8 3 mA

    MIR/FIR ICC 2 3.3 mA

    SD = HighT= 25C

    ISD 0.01 A

    SD = High ISD

    1 A

    TA - 25 + 85 LowTXDSD VIL - 0.5 0.5

    V

    HighTXDSD CMOS

    (2) VIH VCC - 0.3 6 V

  • www.vishay.com For technical questions within your region, please contact one of the following:irdasupportAM@vishay.com, irdasupportAP@vishay.com, irdasupportEU@vishay.com

    Document Number: 823424 Rev. 1.5, 06-Sep-13

    TFDU6103Vishay Semiconductors 2.4 V 5.5 V

    FIR4 M /

    Not for New Designs

    (1) Tamb = 25 CVCC1 = VCC2 = 2.4 V 5.5 V

    (2) 0.5 x VCC1VCC1 = 3 V /

    TXDSD VIN = 0.9 x VCC1 IICH - 1 + 1 A

    TXDSD CI 5 pF

    Low IOL = 500 ACload = 15 pF VOL 0.4 V

    High IOH = 250 ACload = 15 pF VOH 0.9 x VCC1 V

    RXD HighLow VCC1

    2020

    mAmA

    SD 30 sRXD/VCC1 RRXD 400 500 600 kWSD tSDPW

    200 ns

    (1) SYMBOL MIN. TYPICAL MAX.

    (1)

    SYMBOL MIN.TYPIC

    AL MAX.

    Ee (3)SIR

    9.6 k / 115.2 k / = 850 nm 900 nm Ee

    25(2.5)

    35(3.5)

    mW/m2 (W/cm2)

    EeMIR

    1.152 M / = 850 nm 900 nm Ee

    65(6.5)

    mW/m2 (W/cm2)

    EeFIR

    4 M / = 850 nm 900 nm Ee

    80(8)

    90(9)

    mW/m2 (W/cm2)

    Ee (4) = 850 nm 900 nm Ee5(500)

    kW/m2 (mW/cm2)

    (2) Ee4(0.4)

    mW/m2 (W/cm2)

    10 % 90 %15 pF tr (RXD) 10 40 ns

    90 % 10 %15 pF tf (RXD) 10 40 ns

    RXD50%SIR

    1.4 s < PWopt < 25 s tPW 2.1 s

    1.4 s < PWopt < 25 s- 25C < T < 85C (5) tPW 1.5 1.8 2.6 s

    RXD50%MIR

    PWopt = 217 ns1.152 M / tPW

    110 250 270 ns

    RXD50%FIR

    PWopt = 125 ns4 M / tPW

    100 140 ns

    PWopt = 250 ns4 M / tPW

    225 275 ns

    = 100 mW/m24 M / 20 ns

    = 100 mW/m21.152 M / 40 ns

    = 100 mW/m2576 k / 80 ns

    = 100 mW/m2115.2 k / 350 ns

    250 s

    tL 40 100 s

  • Document Number: 82342 For technical questions within your region, please contact one of the following:irdasupportAM@vishay.com, irdasupportAP@vishay.com, irdasupportEU@vishay.com

    www.vishay.comRev. 1.5, 06-Sep-13 5

    TFDU61032.4 V 5.5 V

    FIR4 M /Vishay Semiconductors

    Not for New Designs

    (1) Tamb = 25 CVCC = 2.4 V 5.5 V4 M /IrDA FIR 5 s

    (2) IrDA(3) IrDA : Ee BER

    (4) EeBERVishaySymbols and Terminology

    (5) 1(6) 1IEC 60825-1(7) IrDA 850 nm 900 nm Philips RC5/RC6RECS 80 RC IrDA125 mW/sr8 m 12 m

    IRED

    : VCC1 = VCC2 = 3.3 V

    ID 330 440 600 mA

    t < 20 s tpw t s

    20 s < t < 150 s tpw 18 150 s t 150 s tpw_lim 150 s

    IRED IIRED - 1 1 A 1

    VCC = VIRED = 3.3 V = 0TXD = HighSD = LowR1 = 1 W Ie

    110 170 468 (6) mW/sr

    1

    VCC = VIRED = 3.3 V = 015TXD = HighSD = LowR1 = 1 W Ie

    100 130 468 (6) mW/sr

    VCC1 = 3.3 V = 015

    TXD = Low SD = HighSD = High

    Ie 0.04 mW/sr

    24 deg

    - (7) p 875 886 900 nm

    45 nm

    tropttfopt

    10 40 ns

    217 ns1.152 M / topt 207 217 227 ns

    125 ns4 M / topt 117 125 133 ns

    250 ns4 M / topt 242 250 258 ns

    25 %

    (1)

    SYMBOL MIN.TYPIC

    AL MAX.

  • www.vishay.com For technical questions within your region, please contact one of the following:irdasupportAM@vishay.com, irdasupportAP@vishay.com, irdasupportEU@vishay.com

    Document Number: 823426 Rev. 1.5, 06-Sep-13

    TFDU6103Vishay Semiconductors 2.4 V 5.5 V

    FIR4 M /

    Not for New Designs

    Vishay SemiconductorsTXDSD RXD DCI/O

    1 -

    C1IRED R1 6

    C2 C3 R2 VCC1 R2C1C2C3 VCC1 VCC2C2 C3 C1 C3 C2VCC2 VCC2 4.7 FC1RFThe Art of ElectronicsPaulHorowitzWinfield Hill1989Cambrige University PressISBN: 0521370957

    I/O I/O I/OI/OVishayVishay

    TFDU6103 SIRFIRTXD SD 115.2 k /

    0.576 M / 4 M / )1. SD LogicHigh2. TXD LogicHights 200 ns

    3. SD LogicLow TXD

    4. th 200 nsTXD LogicLowTXD

    TXD TXD576 k / 4 M /

    IRED Anode

    Vcc

    Ground

    SD

    TXD

    RXD

    IRED Cathode

    Vcc2

    Vcc1

    GND

    SD

    TXD

    RXD

    R1

    R2C1 C2C3

    19789

    1 - VISHAY

    C1C3 4.7 F16 V 293D 475X9 016BC2 0.1 F VJ 1206 Y 104 J XXMT

    R1 3.3 V : 2 x CRCW-1206-1R0-F-RT1

    R2 10 0.125 W CRCW-1206-10R0-F-RT1

  • Document Number: 82342 For technical questions within your region, please contact one of the following:irdasupportAM@vishay.com, irdasupportAP@vishay.com, irdasupportEU@vishay.com

    www.vishay.comRev. 1.5, 06-Sep-13 7

    TFDU61032.4 V 5.5 V

    FIR4 M /Vishay Semiconductors

    Not for New Designs

    2.4 K / 115.2K / ) 1. SD LogicHigh2. TXD LogicLowts 200 ns

    3. SD LogicLow TXD

    4. TXD th 200 nsTXD TXD9.6 k / 115.2 k / SD RXD 2 s Low SD 4 s RXD

    2 -

    /

    3 - /

    TFDU6103 (3.0 - 4.0) (0.5 - 0.9) Ramp-Soak-SpikeRSSRamp-To-SpikeRTS 2

    Ramp-Soak-Spike Ramp-To-Spike 4 5TFDU6103VishaySMD Assembly Instructions0.9 C/ 1.3 C/ IC

    TFDUxxxx TFBSxxxx

    TXD

    SD

    t s t h

    50 %

    High: FIR

    Low: SIR

    50 %

    50 %

    14873

    2 -

    SD TXD mW/m2 RXD High x x VCC1500 k 0

    Low

    High x Low IeHigh > 150 s x High 0

    Low < 4 High 0

    Low > Ee< Ee

    Low 0

    Low > Ee x 0

    020406080

    100120140160180200220240260

    0 50 100 150 200 250 300 350

    Time/s

    Tem

    pera

    ture

    (C

    )

    2 to 4 C/s

    2 to 4 C/s

    10 s max. at 230 C

    120 to180 s

    160 C max.

    240 C max.

    90 s max.

    19535

  • www.vishay.com For technical questions within your region, please contact one of the following:irdasupportAM@vishay.com, irdasupportAP@vishay.com, irdasupportEU@vishay.com

    Document Number: 823428 Rev. 1.5, 06-Sep-13

    TFDU6103Vishay Semiconductors 2.4 V 5.5 V

    FIR4 M /

    Not for New Designs

    VishayTFDUxxxx TFBSxxx MSL4 Taping, Labeling, Storage and Packing

    4 - RSS

    5 - RTS

    6 4 VIRED cathode 2 85

    6 -

    0

    25

    50

    75

    100

    125

    150

    175

    200

    225

    250

    275

    0 50 100 150 200 250 300 350

    Time/s

    Tem

    pera

    ture

    /C

    30 s max.

    2 C/s to 3 C/s

    2 C/s to 4 C/s90 s to 120 s

    T 217 C for 70 s max.

    Tpeak = 260 C

    70 s max.

    T 255 C for 10 s....30 s

    19532

    0

    40

    80

    120

    160

    200

    240

    280

    0 50 100 150 200 250 300

    Time/s

    Tem

    pera

    ture

    /C

    < 4 C/s

    1.3 C/s

    Time above 2