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  • For immediate release:

    Yole Dveloppement Le Quartz 75 cours Emile Zola 69100 Lyon-Villeurbanne - France

    GaN Power Electronics will top one billion dollar in revenue in a couple of years thanks to a cross-fertilization with the LED industry ,

    announces Yole Dveloppement Power GaN 2012 edition, a report from Yole Dveloppement

    Lyon, France March 7, 2012 Yole Dveloppement announces its report Power GaN 2012

    edition. In this report, Yole Dveloppement provides a complete analysis of the GaN device and

    substrate industry in the power electronics field market forecasts, company involvements, etc.

    Slow ramp-up but huge expectations.

    The GaN power device industry has probably generated less than $2.5M revenues in 2011, as only 2

    companies (IRF & EPC Corp.) are selling products on the open market. However, the overall GaN

    activity has seen extra revenues as R&D contracts, qualification tests and sampling for qualified

    customers was extremely buoyant.

    At very short term, IRF and EPC will likely remain the two main vendors of GaN power devices on the

    open market in early 2012. This market is likely to stay below $10M for devices, with the rest being

    made through R&D sales.

    2013 should signal the transition from qualification to production ramp-up for several new entrants.

    The device market could reach the $50M threshold. In 2014, most of these new entrants will ramp-

    up their capacity, and by 2015 the availability and adoption of qualified 600V+ GaN devices should

    see the market grow very quickly, and open doors to non-consumer applications. In 2015, 12-15

    players will share the consumption of more than 100,000 x 6 (equiv.) epiwafers.

    Beyond that, if GaN is qualified in the EV/HEV sector, GaN device business could top the billion dollar

    line and the GaN-on-Si substrate market could exceed $300M revenues by 2019, explains Dr Philippe

    Roussel, Business Unit Manager, Power Electronics at Yole Dveloppement. However, it is still

    unclear how car makers will choose between SiC, GaN or the current Silicon technology.

    At the substrate end, R&D activities are still quite fragmented between several options involving

    GaN-on-Sapphire, GaN-on-SiC, GaN-on-GaN, GaN-on-AlN and GaN-on-Silicon. Nevertheless, GaN-on-

    Si is likely to take a dominant position as 6 is now available with more than 7m thick GaN epi and

    8 is under qualification. 8 diameter availability is probably the parameter that will make this

    technology choice obvious.

    It is now obvious that the GaN power world attracts numerous newcomers. Yole Dveloppements

    team has screened 5 companies positioned on the epiwafer business side and more than 6 GaN

    device pure-players, aside to another 15 Si-based power firms developing GaN technology.

  • 2

    GaN power electronics cross-fertilizes with LED industry

    A new trend is LED players now starting looking at this new business opportunity and wondering how

    to put in place a strategy of diversification to convert their existing extra LED capacity into power.

    That represents an epsilon today, but Yole Dveloppement assumes it may create some

    disturbances in the natural and organic expected growth

    GaN power electronics past, present and future business is inseparable to the LED industry. Both are

    linked in technology and market dynamics:

    In the past, the premises of GaN epi technology came from the LED industry that has brought

    this technology from the labs to mass production.

    Today, the extensive developments of GaN-on-Si epiwafers fertilized both the LED and the

    Power industry. Most of the epiwafer vendors are targeting these 2 segments with dedicated

    products and offers.

    Tomorrow, it is likely some incumbent LED pure-players will enter in the Power industry

    world, using their extra-capacity and existing tool-sets to make, at least epiwafers, or even

    power devices.

    Thus, at the end of the day, Yole Dveloppement will not talk about LED or Power sectors anymore,

    but rather about GaN device industry as main players could be the same.

    A question of business model

    Power device makers usually buy polished Silicon wafers, conduct the epi (or buy Si epi-wafers) if

    needed (FZ thin wafer doesnt require epitaxy) then process the devices. This model is roughly the

    same for SiC technology.

    For those who plan to enter in the GaN field, 2 scenarios could occur:

    Some may not integrate MOCVD GaN epitaxy. They will buy GaN epiwafers and process it in

    the existing CMOS Front-End lines, as they use to do with Silicon substrates (or SiC)

  • 3

    Some will try to fully integrate the GaN process, from the bare silicon, the GaN epi and the

    Front-End

    Yole Dveloppements report provides a complete analysis of the GaN device and substrate industry

    in the power electronics field along with key market metrics. It provides company involvement as

    well as technology state-of-the-art. In addition, an extensive review of the possible substrates for

    GaN is provided, offering the most complete view of the Power GaN industry available to date.

    About Power GaN report, 2012 edition:

    Author :

    Philippe ROUSSEL, Ph.D holds a Ph-D in Integrated Electronics Systems from the National Institute of Applied

    Sciences (INSA) in LYON. He joined Yole Dveloppement in 1998 and is leading the Compound Semiconductors,

    LED,Power Electronics and Photovoltaic department.

    Catalogue price: Euros 3,990.00 (single user license) - Publication date: March 2012. For special offers

    and the price in dollars, please contact David Jourdan (jourdan@yole.fr or +33 472 83 01 90).

    Companies cited in the report:

    Aixtron, AZZURRO, BeMiTec, Bridgelux, CamGaN Ltd, Diotec, Dow Corning, Dowa Electronics Materials,

    Enphase , EPC Corp., EpiGaN, Episil, Fairchild, FBH, Freescale, Fuji Electric, Furukawa, GaN Systems, GLO AB,

    Global foundries, HelioDEL, Hitachi, III-V Lab, IMEC, Infineon, International Rectifier, Intersil, IQE, Kyma, Lattice

    Semiconductor, LG Electronics, LG Siltron, Lumileds, MicroGaN, Microsemi, Mitsubishi Electric, Nitek Inc.,

    Nitronex, NTT, NXP, OnSemi, Osram, Oxford Instruments, Panasonic, Plessey Semiconductors, Powdec, Power

    Integrations, Renesas, Rose Street Lab, Samsung, Sanken Electric, Shimei Semiconductor, Shindengen, Siltronic,

    Soitec, STMicro, Sumitomo SEI, Texas Instruments, Toshiba, Transluscent, Transphorm, TSMC, Tyndall National

    Institute, Veeco, Velox, Vishay

    About Yole Dveloppement www.yole.fr

    Beginning in 1998 with Yole Dveloppement, we have grown to become a group of companies providing market research,

    technology analysis, strategy consulting, media in addition to finance services. With a solid focus on emerging applications

    using silicon and/or micro manufacturing Yole Dveloppement group has expanded to include more than 50 associates

    worldwide covering MEMS, MedTech, Advanced Packaging, Compound Semiconductors, Power Electronics, LED, and

    Photovoltaics. The group supports companies, investors and R&D organizations worldwide to help them understand

    markets and follow technology trends to develop their business.

    CUSTOM STUDIES

    Market data, market research and marketing analysis

    Technology analysis

    Reverse engineering and reverse costing

    Strategy consulting

    Corporate Finance Advisory (M&A and fund raising)

    TECHNOLOGY & MARKET REPORTS

    Collection of reports

    Players & market databases

    Manufacturing cost simulation tools

    Component reverse engineering & costing analysis

    More information on www.yole.fr

    MEDIA

    Critical news, Bi-weekly: Micronews, the magazine

    In-depth analysis & Quarterly Technology Magazines:

    MEMS Trends 3D Packaging iLED Power Dev'

    Online disruptive technologies website: www.i-

    micronews.com

    Exclusive Webcasts

    Live event with Market Briefings

    CONTACTS

    For more information about :

    Services : Jean-Christophe Eloy (eloy@yole.fr)

    Reports: David Jourdan (jourdan@yole.fr)

    Media : Sandrine Leroy (leroy@yole.fr)

    ###

    mailto:jourdan@yole.frhttp://www.yole.fr/http://www.yole.fr/http://www.i-micronews.com/http://www.i-micronews.com/mailto:eloy@yole.frmailto:jourdan@yole.frmailto:leroy@yole.fr

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